TLP4597G 2002-04-18 1 toshiba photocoupler photorelay TLP4597G pbx telecommunication modem ? fax cards, modems in pc measurement instrumentation the toshiba TLP4597G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-mosfet in a six lead plastic dip package (dip6). the TLP4597G is a bi-directional switch can replace mechanical relays in many applications. 6 pin dip (dip6) 1-form-b peak off-state voltage: 350 v (min) trigger led current: 3 ma (max) on-state current: 150 ma (max) on-state resistance: 25 ? (max) isolation voltage: 2500 vrms (min) ul recognized: ul1577, file no. e67349 pin configuration (top view) schematic unit: mm jedec D jeita D toshiba 11-7a8 weight: 0.4 g (typ.) 1 3 6 4 1: anode 2: cathode 4: drain d1 5: source 6: drain d2 2 5 1 6 4 2 5
TLP4597G 2002-04-18 2 maximum ratings (ta 25c) characteristics symbol rating unit forward current i f 50 ma forward current derating (ta 25c) i f /c 0.5 ma/c peak forward current (100 s pulse, 100 pps) i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c off-state output terminal voltage v off 350 v a connection 150 b connection 150 on-state current c connection i on 300 ma a connection 1.5 b connection 1.5 on-state current derating (ta 25c) c connection i on /c 3.0 ma/c detector junction temperature t j 125 c operating temperature range t opr 40 to 85 c storage temperature range t stg 55 to 125 c lead soldering temperature (10 s) t sol 260 c isolation voltage (ac, 1 min, r.h. 60%) (note 1) bv s 2500 vrms note 1: device considered a two-terminal device: led side pins shorted together, and detector side pins shorted together. recommended operating conditions characteristics symbol min typ. max unit supply voltage v dd 280 v forward current i f 5 25 ma on-state current i on 150 ma operating temperature t opr 20 65 c circuit connections a connection b connection c connection 1 2 3 6 5 4 load ac or dc 1 2 3 6 5 4 load dc 1 2 3 6 5 4 load dc
TLP4597G 2002-04-18 3 individual electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit forward voltage v f i f 10 ma 1.0 1.15 1.3 v reverse current i r v r 5 v 10 a led capacitance c t v 0, f 1 mhz 30 pf off-state current i off v off 350 v, i f 5 ma 1 a detec- tor capacitance c off v 0, f 1 mhz, i f 5 ma 65 pf coupled electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit trigger led current i fc i off 10 a 1 3 ma return led current i ft i on 150 ma 0.1 ma a connection i on 150 ma 15 25 b connection i on 150 ma 8 14 on-state resistance c connection r on i on 300 ma 4 isolation characteristics (ta 25c) characteristics symbol test condition min typ. max unit capacitance input to output c s v s 0, f 1 mhz 0.8 pf isolation resistance r s v s 500 v, r.h. 60% 5
10 10 10 14 ac, 1 min 2500 ac, 1 s, in oil 5000 vrms isolation voltage bv s dc, 1 min, in oil 5000 vdc switching characteristics (ta 25c) characteristics symbol test condition min typ. max unit turn-on time t on 1 ms turn-off time t off r l 200 (note 2) v dd 20 v, i f 5 ma 3 ms note 2: switching time test circuit 6 t off t on 10% 90% v out i f 1 v dd v out r l 4 2 i f
TLP4597G 2002-04-18 4 ambient temperature ta (c) i f ? ta allowable forward current i f (ma) ambient temperature ta (c) i on ? ta on-state current i on (ma) forward voltage v f (v) i f ? v f forward current i f (ma) ta 25c 0.6 0.8 1 1.2 1.6 1.8 1.4 100 30 50 10 3 5 1 0.3 0.5 0.1 i on ? v on on-state current i on (ma) on-state voltage v on (v) ambient temperature ta (c) r on ? ta on-state resistance r on ( ) i on 150 ma t 1s 15 0 20 0 20 40 80 100 60 5 10 20 ambient temperature ta (c) i fc ? ta trigger led current i fc (ma) 0 20 500 120 100 80 60 40 20 0 400 300 200 100 a connection, b connection c connection 0 20 60 20 40 80 100 120 100 80 60 40 20 0 ta 25c 2 1 0 2 1 200 200 100 0 100 i on 150 ma 0 40 5 100 80 60 40 20 0 20 4 3 2 1
TLP4597G 2002-04-18 5 input current i f (ma) t on , t off ? i f switching time t on , t off ( s) ambient temperature ta (c) i off ? ta off-state current i off (na) ambient temperature ta (c) t on , t off ? ta switching time t on , t off ( s) v dd 20 v, r l 200 i f 5 ma 0 40 1200 100 80 60 40 20 0 20 800 600 400 200 t on t off 1000 30 1 2000 100 ta 25c v dd 20 v, r l 200 t on t off 1000 300 500 100 50 30 50 10 3 5 v off 350 v i f 5 ma 0 20 60 100 40 1000 100 10 1 80
TLP4597G 2002-04-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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